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| High Performance InGaAs p-i-n Photodiode 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150m photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supplied or other specified submounts. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Test Conditions -5V -5V 1300nm - Min 0.70 - Typ 0.5 1.25 0.90 - Max -20 2.5 2 2 Units Volts nA pF A/W ns Absolute Maximum Ratings 20 Volts 5 mA 1 mA o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel (805) 445-4500 fax (805) 445-4502. |
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